
Micron has played a pivotal role in JEDEC's creation of a DDR5 memory specification.
The Micron 2550 SSD enables faster, more responsive applications in mainstream PC platforms, including gaming, consumer and business client devices.
Micron continues to lead the industry transition to DDR5,” said Raj Hazra, senior vice president and general manager of Micron’s Compute and Networking Business Unit.
The new megafab will increase domestic supply of leading-edge memory and create nearly 50,000 New York jobs, including approximately 9,000 high paying Micron jobs.
Micron expects to begin production in the second half of the decade, ramping overall supply in line with industry demand trends.
Micron’s 232-layer NAND is a watershed moment for storage innovation as first proof of the capability to scale 3D NAND to more than 200 layers in production
Micron’s new server DDR5 memory maximizes performance for AI, HPC and data-intensive applications that require more CPU compute capacity and higher memory bandwidth than
Micron is uniquely positioned to lead the SATA market with 176-layer NAND,” said Alvaro Toledo, vice president and general manager of Data Center Storage at Micron.
These solutions generate more value for enterprises at the intelligent edge with proprietary features purpose-built for industrial applications.
Both drives will be available in capacities up to 4TB2, making them the ideal scalable storage solutions that professionals, creatives, gamers and other high-performance
These additional capabilities mean end users can experience razor-sharp visuals, higher frame rates and outstanding performance in memory-intensive applications like gami
This new data center SSD includes Micron’s industry-leading NAND, which contains 176 layers of storage cells and proven CMOS-under-the-array technology, to deliver an ult
Micron’s transformative new NAND technology is now available with the introduction of the Micron 2400 SSD, the world’s first 176-layer PCIe Gen4 QLC SSD for client applic
Based on 64-layer triple-level cell (TLC) 3D NAND technology, the new Micron 2100 series of NVMe SSDs is designed for next-generation autonomous cars and the industrial i
Micron LPDDR4X is also available in a UFS-based multichip package (uMCP4) to address the needs of mobile device manufacturers seeking low power for extending battery life
- IC FLASH 16MBIT SPI 75MHZ 8SO
- IC FLASH 4GBIT PARALLEL 48TSOP
- IC FLASH 1GBIT PARALLEL 63VFBGA
- IC FLASH 4MBIT PARALLEL 48TSOP
- IC DRAM 128MBIT PARALLEL 54VFBGA
- IC FLASH 4MBIT PARALLEL 48TFBGA
- IC FLASH 32GBIT MMC 100LBGA
- IC FLASH 1TB PARALLEL 132VBGA
- IC FLASH 64MBIT PARALLEL 64FBGA
- IC FLASH 16MBIT SPI 75MHZ 8VDFPN
- IC FLASH 64MBIT PARALLEL 48TFBGA
- IC FLASH 2GBIT PARALLEL 48TSOP I
- IC FLASH 4MBIT PARALLEL 48TSOP
- IC FLASH 2GBIT PARALLEL 63VFBGA
- IC FLSH 32GBIT PARALLEL 48TSOP I
- IC DRAM 256MBIT PARALLEL 54VFBGA
- IC FLASH 2GBIT SPI 8UPDFN
- IC DRAM 128MBIT PAR 86TSOP II
- IC DRAM 1GBIT PARALLEL 92FBGA
- IC SRAM 4MBIT PARALLEL 100TQFP
- ZBT SRAM, 256KX32, 5NS, CMOS, PB
- IC DRAM 512MBIT PARALLEL 60FBGA
- IC FLASH 8MBIT PARALLEL 48TSOP I
- IC FLASH 2GBIT SPI 63VFBGA
- IC DRAM 4GBIT 1.866GHZ 200WFBGA
- IC FLSH 256MBIT PARALLEL 55VFBGA
- IC FLASH 128MBIT PARALLEL 56TSOP
- IC FLASH 32MBIT PARALLEL 56TSOP
- IC FLASH 128MBIT SPI 133MHZ 16SO
